Aluminum doping of epitaxial silicon carbide

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 340-350

  Forsberg, U ^a,c   Danielsson, O ^a   Henry, A ^a   Linnarsson, M K ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c Okmetic AB   (Sweden)

Author keywords

A1. Doping; A1. Growth models; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

ALUMINUM; CARBON; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; PRESSURE EFFECTS; SEMICONDUCTOR DOPING;

HOT WALL EPITAXY;

SILICON CARBIDE;

EID: 0038176743     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01045-5     Document Type: Article

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