High-voltage n-channel IGBTs on free-standing 4H-SiC epilayers

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 511-515

  Wang, Xiaokun ^a   Cooper, James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Free standing epilayer; High voltage; Insulated gate bipolar transistor (IGBT); Silicon carbide (SiC)

Indexed keywords

4H SILICON CARBIDE; CRITICAL LAYER; DEVICE FABRICATIONS; DRIFT LAYERS; EPITAXIALLY GROWN; HIGH VOLTAGE; HIGH VOLTAGE INSULATED GATE BIPOLAR TRANSISTORS; HIGH-VOLTAGES; N-CHANNEL; ON-RESISTANCE; POWER DISSIPATION; SIC EPILAYERS; THICKNESS VALUE;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRONIC EQUIPMENT MANUFACTURE; EPILAYERS; EPITAXIAL GROWTH; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76349086665     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2037379     Document Type: Article

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