Influence of C/Si ratio on the 4H-SiC (0001) epitaxial growth and a keynote for high-rate growth

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 213-216

  Ishida, Y ^a   Takahashi, T ^a   Kojima, K ^a   Okumura, H ^a   Arai, K ^a   Yoshida, S ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

C Si ratio; Epitaxial growth; High rate growth; Homogeneous nucleation; Si condensation; Stap bunching

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CONDENSATION; DEGRADATION; EPITAXIAL GROWTH; MORPHOLOGY; NUCLEATION;

C/SI RATIO; EPILAYERS; HIGH-RATE GROWTH; HOMOGENEOUS NUCLEATION; SI CONDENSATION; STAP BUNCHING;

SILICON CARBIDE;

EID: 8744242101     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.213     Document Type: Conference Paper

References (4)

1. A. Ellison, J. Zhang, A. Henry and E. Janzen, J. Cryst. Growth 236 (2002), p. 225.
2. K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai, Mater. Sci. Forum, 389-393 (2002), p. 179.
3. Y. Ishida et al., Japanese meeting of SiC and related wide gap semiconductor materials, (2002), IV-9. (in Japanese)
4. G. Ferro, D. Chaussende, F. Cauwet and Y. Monteil, Mater. Sci. Forum, 389-393 (2002), p. 287.