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Volumn 410, Issue , 1996, Pages 337-344
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Dopant incorporation efficiency in CVD silicon carbide epilayers
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Author keywords
[No Author keywords available]
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Indexed keywords
BORON COMPOUNDS;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
HYDROGEN;
NITROGEN COMPOUNDS;
PHOSPHORUS COMPOUNDS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING FILMS;
SUBSTRATES;
THERMAL EFFECTS;
DOPANT INCORPORATION EFFICIENCY;
DOPANT SOURCE REACTOR CONCENTRATION;
SITE COMPETITION EFFECT;
SUBSTRATE POLARITY;
SILICON CARBIDE;
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EID: 0029708872
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (4)
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References (22)
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