Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 21-24

  Sundqvist, B ^a   Ellison, A ^a   Jonsson, A ^a   Henry, A ^a,b   Hallin, C ^b   Bergman, J P ^b   Magnusson, B ^a   Janzen E ^b  

^a Okmetic AB   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

AI Doping; HTCVD; Micropipes; SiC Bulk Growth

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SYNCHROTRON RADIATION; X RAY ANALYSIS;

MICROPIPES;

SILICON CARBIDE;

EID: 0242497093     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.21     Document Type: Conference Paper

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