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Volumn 79, Issue 13, 2001, Pages 2016-2018
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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0035943884
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1402160 Document Type: Article |
Times cited : (45)
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References (8)
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