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Volumn 79, Issue 13, 2001, Pages 2016-2018

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035943884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402160     Document Type: Article
Times cited : (45)

References (8)
  • 2
    • 0001658615 scopus 로고
    • Amorphous and Crystalline Silicon Carbide III
    • edited by G. L. Harris, M. G. Spencer, and C. Y. Yang Springer, Berlin
    • Y. A. Vodakov, E. N. Mokhov, M. G. Ramm, and A. D. Roenkov, Amorphous and Crystalline Silicon Carbide III, Springer Proc. Phys. Vol. 56, edited by G. L. Harris, M. G. Spencer, and C. Y. Yang (Springer, Berlin, 1992), p. 329.
    • (1992) Springer Proc. Phys. , vol.56 , pp. 329
    • Vodakov, Y.A.1    Mokhov, E.N.2    Ramm, M.G.3    Roenkov, A.D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.