Characterization of threshold voltage instability after program in charge trap flash memory

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 284-287

  Kim, Bio ^a   Baik, Seungjae ^a   Kim, Sunjung ^a   Lee, Joon Gon ^a   Koo, Bonyoung ^a   Choi, Siyoung ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Charge trap flash; Component; Electron detrapping; Lateral spreading; Threshold voltage shift

Indexed keywords

CHARGE TRAP FLASH; COMPONENT; ELECTRON DETRAPPING; LATERAL SPREADING; THRESHOLD VOLTAGE SHIFT;

CHARGE TRAPPING; DRAIN CURRENT; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 70449123684     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173265     Document Type: Conference Paper

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