Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Miccoli, Carmine ^a   Barber, John ^b   Compagnoni, Christian Monzio ^a   Paolucci, Giovanni M ^a   Kessenich, Jeffrey ^b   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Koval, Randy J ^b   Goda, Akira ^d  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

^c IFN CNR   (Italy)

^d INTEL CORPORATION   (United States)

Author keywords

Flash memories; program erase cycling; semiconductor device modeling; semiconductor device reliability

Indexed keywords

EXPERIMENTAL CONDITIONS; EXPERIMENTAL DATUM; EXPERIMENTAL EVIDENCE; NAND FLASH ARRAYS; NAND FLASH MEMORY; NUMBER FLUCTUATIONS; PROGRAM/ERASE; SEMICONDUCTOR DEVICE RELIABILITY;

FLASH MEMORY; SEMICONDUCTOR DEVICE MODELS;

TRANSIENTS;

EID: 84880992727     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6531977     Document Type: Conference Paper

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