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Volumn 28, Issue 5, 2013, Pages

Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

(10) Garcia H a Castan H a Perez, E a Duenas S a Bailon L a Blanquart, T b Niinisto J b Kukli, K b Ritala, M b Leskela M b

a UNIVERSITY OF VALLADOLID (Spain)

b UNIVERSITY OF HELSINKI (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINE FILMS; DEPOSITION TEMPERATURES; METAL INSULATOR METAL CAPACITOR (MIM); MIM CAPACITORS; OXYGEN PRECURSORS; PERMITTIVITY VALUES; POST-DEPOSITION;

AMORPHOUS FILMS; ANNEALING; ATOMIC LAYER DEPOSITION; CAPACITORS; DEPOSITION; ELECTRIC PROPERTIES;

MIM DEVICES;

EID: 84876586024 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/28/5/055005 Document Type: Article

Times cited : (14)

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