Composition influence on the physical and electrical properties of Sr x Ti1-x Oy -based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

  Menou, N ^a   Popovici, M ^a   Clima, S ^a   Opsomer, K ^a,b   Polspoel, W ^a   Kaczer, B ^a   Rampelberg, G ^b   Tomida, K ^a   Pawlak, M A ^a   Detavernier, C ^b   Pierreux, D ^c   Swerts, J ^a,c   Maes, J W ^c   Manger, D ^d   Badylevich, M ^e   Afanasiev, V ^e   Conard, T ^a   Favia, P ^a   Bender, H ^a   Brijs, B ^a   Vandervorst, W ^a   Van Elshocht, S ^a   Pourtois, G ^a   Wouters, D J ^a   Biesemans, S ^a   Kittl, J A ^a   more..

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c ASM BELGIUM   (Belgium)

^d Qimonda   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; BOTTOM ELECTRODES; CRYSTALLIZATION TEMPERATURE; DIELECTRIC CONSTANTS; DIRECT IMPACT; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FILM INTERFACES; LOW TEMPERATURES; METAL ELECTRODES; METAL-INSULATOR-METAL CAPACITORS; PHYSICAL ANALYSIS; PHYSICAL THICKNESS; PROCESSING CONDITION; TIN ELECTRODES; WORK FOCUS;

ATOMIC LAYER DEPOSITION; CAPACITANCE; CAPACITORS; ELECTRODES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PLATINUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE CHEMISTRY; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ELECTROLYTIC CAPACITORS;

EID: 70450255002     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3246835     Document Type: Article

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