Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 248-253

  Fillot, F ^a,b   Morel, T ^a   Minoret, S ^a   Matko, I ^b   Maitrejean S ^a   Guillaumot, B ^c   Chenevier, B ^b   Billon, T ^a  

^a CEA LETI   (France)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

ALD; Metal gate; TDMAT; TiN; Work function

Indexed keywords

COMPOSITION; FUNCTIONS; MICROSTRUCTURE; MOSFET DEVICES;

HIGH TEMPERATURE ANNEALING; ORGANIC ATOMIC LAYER DEPOSITION;

TITANIUM COMPOUNDS;

EID: 28044439864     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.083     Document Type: Conference Paper

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