Characteristics of electron-beam-gun-evaporated ER2O3 thin films as gate dielectrics for silicon

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5447-5449

  Mikhelashvili, V ^a   Eisenstein, G ^a   Edelmann, F ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890579     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1413239     Document Type: Article

References (11)

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