Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1815-1817

  Manger, D ^a   Kaczer, B ^b   Menou, N ^b   Clima, S ^b   Wouters, D J ^b   Afanas'ev, V V ^c   Kittl, J A ^b  

^a Qimonda Belgium   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Conduction mechanism; Leakage; Photoconductivity; SrTiO3; Temperature dependent leakage

Indexed keywords

CONDUCTION MECHANISM; CONDUCTIVITY MEASUREMENTS; LEAKAGE; SIMULATION RESULT; SRTIO; SRTIO3; TEMPERATURE DEPENDENT LEAKAGE; ULTRA-THIN;

PHOTOCONDUCTIVITY;

STRONTIUM ALLOYS;

EID: 67349196797     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.122     Document Type: Article

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