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Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4576-4579

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal-Insulator-Metal capacitors

(6) Lukosius, M a Kaynak, C Baristiran a Kubotsch, S a Blomberg, T b Ruhl, G c Wenger, Ch a

a IHP (Germany)

b ASM Microchemistry Oy (Finland)

c INFINEON TECHNOLOGIES AG (Germany)

Author keywords

ALD; AVD; MIM,Ta2O5; Nb Ta O; Sr Ta O; Ti Ta O

Indexed keywords

ALD; AVD; MIM,TA2O5; NB-TA-O; SR-TA-O; TI-TA-O;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRODES; LEAKAGE CURRENTS; MIM DEVICES; NIOBIUM; OXIDE FILMS; TANTALUM OXIDES; TITANIUM NITRIDE; VAPORS;

TANTALUM;

EID: 84860275994 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.199 Document Type: Conference Paper

Times cited : (7)

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