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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 1, 2011, Pages

Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

(11) Garcia H a Castan H a Gomez A a Duenas S a Bailon L a Kukli, K b Kariniemi, M b Kemell, M b Niinisto J b Ritala, M b Leskela M b

a UNIVERSITY OF VALLADOLID (Spain)

b UNIVERSITY OF HELSINKI (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; OZONE; STRONTIUM; STRONTIUM ALLOYS; TITANIUM;

AS-DEPOSITED STATE; ELECTRICAL PROPERTY; METAL-INSULATOR-METAL CAPACITORS; OXYGEN PRECURSORS; PERMITTIVITY VALUES; PRECURSOR CHEMISTRY; SRTIO; TITANIUM PRECURSORS;

AMORPHOUS FILMS;

EID: 79551626062 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3525280 Document Type: Conference Paper

Times cited : (6)

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