Electrical characterization of advanced MIM capacitors with ZrO 2 insulator for high-density packaging and RF applications

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 3, 2012, Pages 502-509

  Bertaud, Thomas ^a   Bermond, Cédric ^b   Blonkowski, Serge ^e   Vallée, Christophe ^c,d   Lacrevaz, Thierry ^b   Farcy, Alexis ^e   Gros Jean, Mickael ^e   Fléchet, Bernard ^b  

^a INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS   (Germany)

^b UNIVERSITÉ DE SAVOIE   (France)

^c Laboratoire Interdisciplinaire de Physique   (France)

^d UNIV GRENOBLE ALPES   (France)

^e STMICROELECTRONICS   (France)

Author keywords

capacitance frequency measurements; dielectric materials; metal insulator metal devices; quality factor; temperature coefficient of capacitance; voltage coefficient of capacitance; ZrO 2

Indexed keywords

FREQUENCY MEASUREMENTS; METAL INSULATOR METALS; QUALITY FACTOR; TEMPERATURE COEFFICIENT OF CAPACITANCE; VOLTAGE COEFFICIENT OF CAPACITANCE; ZRO 2;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 84859075856     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2182611     Document Type: Article

References (16)

1. K. C. Chiang, C. H. Lai, A. Chin, T. J. Wang, H. F. Chiu, J.-R. Chen, S. P. McAlister, and C. C. Chi, "Very high-density (23fF/μm2) RF MIM capacitors using high-k TaTiO as the dielectric," IEEE Electron Dev. Lett., vol. 26, no. 10, pp. 728-730, Oct. 2005. (Pubitemid 41488885)
2. 2 and HfO2 films for integrated MIM capacitors," Microelectron. Eng., vol. 87, no. 3, pp. 301-305, Mar. 2010.
3. International Technology Roadmap for Semiconductors. (2007) Online. Available: http://www.itrs.net/
4. E. P. Vandamme, D. M. M.-P. Schreurs, and C. van Dinther, "Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures," IEEE Trans. Electron Dev., vol. 48, no. 4, pp. 737-742, Apr. 2001. (Pubitemid 32372235)
5. 2 dielectric for metal-insulator-metal integrated capacitors," in Proc. IEEE Asia Pacific Microw. Conf., Singapore, Dec. 2009, pp. 1397-1400.
6. 2," Thin Solid Films, vol. 486, pp. 125-128, Feb. 2005. (Pubitemid 40952553)
7. J.-P. Manceau, A. Bajolet, S. Cremer, M. Quoirin, S. Bruyere, A. Sylvestre, and P. Gonon, "New capacitor parametric test methodology for process issues control," in Proc. 37th Eur. Solid State Dev. Res. Conf., Sep. 2007, pp. 398-401.
8. 2/TiN 3-D stacked capacitors for 45 nm embedded DRAM technologies," in Proc. 36th Eur. Solid State Dev. Res. Conf, Sept. 2006, pp. 343-346. (Pubitemid 351278326)
9. C. Wenger, M. Lukosius, G. Weidner, H.-J. Müssig, S. Pasko, and C. Lohe, "The role of the HfO2-TiN interface in capacitance-voltage nonlinearity of metal-insulator-metal capacitors," Thin Solid Films, vol. 517, pp. 6334-6336, Feb. 2009.
10. A. K. Jonscher, "Dielectric relaxation in solids," J. Phys. D: Appl. Phys., vol. 32, pp. 57-70, Feb. 1999.
11. J.-P. Manceau, S. Bruyère, S. Jeannot, A. Sylvestre, and P. Gonon, "Current instability, permittivity variation with frequency, and their relationship in Ta2O5 Capacitor," IEEE Trans. Dev. Mater. Reliabil., vol. 7, no. 2, pp. 315-322, Jun. 2007.
12. 2 thin films prepared by anodic oxidation," Jpn. J. Appl. Phys., vol. 42, no. 7, pp. 4399-4403, Feb. 2003.
13. 2-based RF metal-insulator-metal capacitors," IEEE Electron Dev. Lett., vol. 31, no. 2, pp. 114-116, Feb. 2010.
14. S. Blonkowski, M. Regache, and A. Halimaoui, "Investigation and modelling of the electrical properties of metal-oxide-metal structures formed from chemical vapour deposited Ta2O5 films," J. Appl. Phys., vol. 90, no. 3, pp. 1501-1508, Aug. 2001. (Pubitemid 33664581)
15. R. Waser, R. Dittman, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanisms, prospects and challenges," Adv. Mater., vol. 21, pp. 2632-2663, Apr. 2009.
16. C. Vallée, P. Gonon, C. Jorel, and F. El Kamel, "Electrode oxygenaffinity influence on voltage nonlinearities in high-k metal-insulatormetal capacitors," Appl. Physic. Lett., vol. 96, no. 23, pp. 233504-1-233504-3, Jun. 2010.