Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 38-39

  Kil, Deok Sin ^a   Song, Han Sang ^a   Lee, Kee Jeung ^a   Hong, Kwon ^a   Kim, Jin Hyock ^a   Park, Ki Seon ^a   Yeom, Seung Jin ^a   Roh, Jae Sung ^a   Kwak, Noh Jung ^a   Sohn, Hyun Chul ^a   Kim, Jin Woong ^a   Park, Sung Wook ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Al2O3; ALD; TIT capacitor; ZrO2

Indexed keywords

DIELECTRIC FILMS; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; ROBUST CONTROL; ZIRCONIUM COMPOUNDS;

DRAM DEVICES; MASS PRODUCTION;

CAPACITORS;

EID: 41149148206     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. D.S. Kil, et al., VLSI Tech. Dig., pp 73, 2004
2. K.R. Yoon, et al., SSDM, pp 188, 2005
3. Xinyuan Zhao et at., Physical Review B, 075105, Vol.65