Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2

Journal of Vacuum Science and Technology B

Volumn 28, Issue 5, 2010, Pages 946-951

  Ebm, Christoph ^a   Hobler, Gerhard ^b   Waid, Simon ^b   Wanzenboeck, Heinz D ^b  

^a IMS NANOFABRICATION AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FLUORINE COMPOUNDS; ION BEAMS; IONS; SILICA;

FOCUSED IONS BEAMS; NANOPATTERNING; NON STEADY-STATE; PRECURSOR ADSORPTION; PRECURSOR DECOMPOSITION; PRECURSOR DIFFUSION; PROCESSING SPEED; SIMULATION MODEL; STEADY STATE SOLUTION; TRANSLATIONAL SYMMETRY;

ETCHING;

EID: 77957734088     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3481139     Document Type: Article

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