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Volumn 22, Issue 2, 2011, Pages

Review of current progress in nanometrology with the helium ion microscope

Author keywords

Critical dimension; Helium ion; HIM; Microscope; Nanomanufacturing; Nanometrology; Scanning electron microscope; SEM

Indexed keywords

ELECTRONS; HELIUM; INDUSTRIAL RESEARCH; ION BEAMS; ION MICROSCOPES; ION SOURCES; MICROSCOPES; UNITS OF MEASUREMENT;

EID: 79251498310     PISSN: 09570233     EISSN: 13616501     Source Type: Journal    
DOI: 10.1088/0957-0233/22/2/024004     Document Type: Review
Times cited : (39)

References (42)
  • 2
    • 85034760920 scopus 로고    scopus 로고
    • NNI Grand Challenge Workshop Report
    • National Nanotechnology Initiative, available at
    • National Nanotechnology Initiative 2006 NNI Grand Challenge Workshop Report Instrumentation and Metrology available at www.nano. gov
    • (2006) Instrumentation and Metrology
  • 3
    • 42149113697 scopus 로고    scopus 로고
    • Instrumentation, metrology, and standards key elements for the future of nanomanufacturing
    • Postek M T and Lyons K 2007 Instrumentation, metrology, and standards key elements for the future of nanomanufacturing Proc. SPIE 6648 664802
    • (2007) Proc. SPIE , vol.6648 , pp. 664802
    • Postek, M.T.1    Lyons, K.2
  • 4
    • 85034747121 scopus 로고    scopus 로고
    • NNI Affiliated Workshop
    • National Nanotechnology Initiative, available at
    • National Nanotechnology Initiative 2010 NNI Affiliated Workshop Cross-industry Issues in Nanomanufacturing Workshop Report available at www.nano. gov
    • (2010) Cross-industry Issues in Nanomanufacturing Workshop Report
  • 7
    • 70450265675 scopus 로고    scopus 로고
    • Breaking the resolution barrier: Understanding the science of helium ion beam microscopy
    • ed D G Seiler et al New York: AIP
    • Postek M T, Vladár A E and Ming B 2009 Breaking the resolution barrier: understanding the science of helium ion beam microscopy Frontiers of Characterization and Metrology for Nanoelectronics ed D G Seiler et al (New York: AIP) pp 249-60
    • (2009) Frontiers of Characterization and Metrology for Nanoelectronics , pp. 249-260
    • Postek, M.T.1    Vladár, A.E.2    Ming, B.3
  • 8
    • 58849098445 scopus 로고    scopus 로고
    • Helium ion microscopy and its application to nanotechnology and nanometrology
    • Postek M T and Vladár A E 2008 Helium ion microscopy and its application to nanotechnology and nanometrology Scanning 30 457-62
    • (2008) Scanning , vol.30 , pp. 457-462
    • Postek, M.T.1    Vladár, A.E.2
  • 12
    • 77958605530 scopus 로고    scopus 로고
    • On the subnanometer resolution of scanning electron and scanning helium ion microscopes
    • Vladár A E, Postek M T and Ming B 2009 On the subnanometer resolution of scanning electron and scanning helium ion microscopes Microsc. Today 3 6-13
    • (2009) Microsc. Today , vol.3 , pp. 6-13
    • Vladár, A.E.1    Postek, M.T.2    Ming, B.3
  • 13
    • 0037592678 scopus 로고    scopus 로고
    • The scanning electron microscope
    • ed J Orloff New York: CRC Press
    • Postek M T 1997 The scanning electron microscope. Handbook of Charged Particle Optics ed J Orloff (New York: CRC Press) pp 363-99
    • (1997) Handbook of Charged Particle Optics , pp. 363-399
    • Postek, M.T.1
  • 14
    • 79251517003 scopus 로고    scopus 로고
    • Helium ion microscopy press release
    • Jan
    • Helium ion microscopy press release Microsc. Anal. 94 (Jan) 28
    • (2009) Microsc. Anal. , vol.94 , pp. 28
  • 15
    • 33845243958 scopus 로고    scopus 로고
    • Helium ion microscope: A new tool for nanoscale microscopy and metrology
    • Ward B, Notte J and Economou N 2006 Helium ion microscope: a new tool for nanoscale microscopy and metrology J. Vac. Sci. Technol. B 24 2871-5
    • (2006) J. Vac. Sci. Technol. B , vol.24 , pp. 2871-2875
    • Ward, B.1    Notte, J.2    Economou, N.3
  • 16
    • 0031396387 scopus 로고    scopus 로고
    • CASINO: A new Monte Carlo code in C language for electron beam interaction - Part I: Description of the program
    • Hovington P, Drouin D and Gauvin R 1997 CASINO: a new era of Monte Carlo code in C language for the electron beam interaction: part I. Description of the program Scanning 19 1-14 (Pubitemid 28292918)
    • (1997) Scanning , vol.19 , Issue.1 , pp. 1-14
    • Hovington, P.1    Drouin, D.2    Gauvin, R.3
  • 17
    • 0031400061 scopus 로고    scopus 로고
    • CASINO: A new Monte Carlo code in C language for electron beam interactions - Part II: Tabulated values of the mott cross section
    • Drouin D, Hovington P and Gauvin R 1997 CASINO: a new era of Monte Carlo code in C language for the electron beam interaction: part II. Tabulated values of Mott cross section Scanning 19 20-8 (Pubitemid 28292920)
    • (1997) Scanning , vol.19 , Issue.1 , pp. 20-28
    • Drouin, D.1    Hovington, P.2    Gauvin, R.3
  • 18
    • 34250679310 scopus 로고    scopus 로고
    • CASINO V2.42: A fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users
    • Drouin D, Couture A R, Joly D, Tastet X, Aimez V and Gauvin R 2007 CASINO V2.42: a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users Scanning 29 92-101
    • (2007) Scanning , vol.29 , pp. 92-101
    • Drouin, D.1    Couture, A.R.2    Joly, D.3    Tastet, X.4    Aimez, V.5    Gauvin, R.6
  • 19
    • 85034758070 scopus 로고
    • Stopping and Range of Ions in Matter software
    • Ziegler J 1972 SRIM (Stopping and Range of Ions in Matter) software (http://www.srim.org/)
    • (1972) SRIM
    • Ziegler, J.1
  • 20
    • 0015396903 scopus 로고
    • Idealized spatial emission distribution of secondary electrons
    • Everhart T E and Chung M S 1972 Idealized spatial emission distribution of secondary electrons J. Appl. Phys. 43 3707-11
    • (1972) J. Appl. Phys. , vol.43 , pp. 3707-3711
    • Everhart, T.E.1    Chung, M.S.2
  • 21
    • 0015202422 scopus 로고
    • Determination of kilovolt electron energy dissipation versus penetration distance in solid materials
    • Everhart T E and Hoff P H 1971 Determination of kilovolt electron energy dissipation versus penetration distance in solid materials J. Appl. Phys. 42 5837-46
    • (1971) J. Appl. Phys. , vol.42 , pp. 5837-5846
    • Everhart, T.E.1    Hoff, P.H.2
  • 23
    • 72849133095 scopus 로고    scopus 로고
    • Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist
    • Winston D, Cord B, Ming B and Bell D 2009 Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist J. Vac. Sci. Technol. B 27 2702-6
    • (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 2702-2706
    • Winston, D.1    Cord, B.2    Ming, B.3    Bell, D.4
  • 24
    • 0020882664 scopus 로고
    • An imaging secondary electron detector for the scanning electron microscope
    • Hasselbach F, Rieke U and Straub M 1983 An imaging secondary electron detector for the scanning electron microscope Scann. Electron. Microsc. II 467-78
    • (1983) Scann. Electron. Microsc. , vol.2 , pp. 467-478
    • Hasselbach, F.1    Rieke, U.2    Straub, M.3
  • 25
    • 0022270453 scopus 로고
    • Working at higher magnifications in scanning electron microscopy with secondary and backscattered electrons on metal coated biological specimens and imaging macromolecular cell membrane structures
    • Peters K-R 1985 Working at higher magnifications in scanning electron microscopy with secondary and backscattered electrons on metal coated biological specimens and imaging macromolecular cell membrane structures Scanning Electron Microsc. 1985 1519-44
    • (1985) Scanning Electron Microsc. , vol.1985 , pp. 1519-1544
    • Peters, K.-R.1
  • 26
  • 27
    • 63449090658 scopus 로고    scopus 로고
    • A model of secondary electron imaging in the helium ion scanning microscope
    • Ramachandra R, Griffen B and Joy D C 2009 A model of secondary electron imaging in the helium ion scanning microscope Ultramicroscopy 109 748-57
    • (2009) Ultramicroscopy , vol.109 , pp. 748-757
    • Ramachandra, R.1    Griffen, B.2    Joy, D.C.3
  • 28
    • 35148846390 scopus 로고    scopus 로고
    • Monte Carlo modeling of secondary electron imaging in three dimensions
    • Villarrubia J S, Ritchie N W M and Lowney J R 2007 Monte Carlo modeling of secondary electron imaging in three dimensions Proc. SPIE 6518 65180K
    • (2007) Proc. SPIE , vol.6518
    • Villarrubia, J.S.1    Ritchie, N.W.M.2    Lowney, J.R.3
  • 29
  • 30
    • 0027590989 scopus 로고
    • Precision, accuracy uncertainty and traceability and their application to submicrometer dimensional metrology
    • Larrabee R D and Postek M T 1993 Precision, accuracy uncertainty and traceability and their application to submicrometer dimensional metrology Solid-State Electron. 36 673-84
    • (1993) Solid-state Electron , vol.36 , pp. 673-684
    • Larrabee, R.D.1    Postek, M.T.2
  • 31
    • 79251515439 scopus 로고    scopus 로고
    • Application of high pressure/environmental SEM microscopy for photomask dimensional metrology. Application of high pressure/environmental SEM microscopy for photomask dimensional metrology
    • ed D Seiler et al New York: AIP
    • Postek M T and Vladár A E 2003 Application of high pressure/environmental SEM microscopy for photomask dimensional metrology. Application of high pressure/environmental SEM microscopy for photomask dimensional metrology CP 683 Characterization and Metrology for ULSI Technology: Int. Conf. ed D Seiler et al (New York: AIP)
    • (2003) CP 683 Characterization and Metrology for ULSI Technology: Int. Conf
    • Postek, M.T.1    Vladár, A.E.2
  • 32
    • 0021300597 scopus 로고
    • Low accelerating voltage inspection and linewidth measurement in the scanning electron microscope
    • Postek M T 1984 Low accelerating voltage inspection and linewidth measurement in the scanning electron microscope Scan. Electron Microsc. III 1065-74
    • (1984) Scan. Electron Microsc. , vol.3 , pp. 1065-1074
    • Postek, M.T.1
  • 34
    • 0032662547 scopus 로고    scopus 로고
    • Modeling and experimental aspects of apparent beam width as a resolution measure
    • Archie C N, Lowney J R and Postek M T 1999 Modeling and experimental aspects of apparent beam width as a resolution measure Proc. SPIE 3677 699-85
    • (1999) Proc. SPIE , vol.3677 , pp. 699-685
    • Archie, C.N.1    Lowney, J.R.2    Postek, M.T.3
  • 37
    • 4344606951 scopus 로고    scopus 로고
    • Results of benchmarking of advanced CD-SEMs at the 90 nm CMOS technology mode
    • Bunday B, Bishop M and Allgair J 2004 Results of benchmarking of advanced CD-SEMs at the 90 nm CMOS technology mode Proc. SPIE 5375 151-72
    • (2004) Proc. SPIE , vol.5375 , pp. 151-172
    • Bunday, B.1    Bishop, M.2    Allgair, J.3
  • 38
    • 85034792130 scopus 로고    scopus 로고
    • Metrologia-Spectel Research
    • Metrologia-Spectel Research (http://www.spectelresearch.com/)
  • 39
    • 85034761760 scopus 로고    scopus 로고
    • NIH Image
    • NIH Image (http://rsb.info.nih.gov/nih-image/)
  • 40
    • 0034757309 scopus 로고    scopus 로고
    • Active monitoring and control of electron-beam-induced contamination
    • Vladár A E, Postek M T and Vane R 2001 Active monitoring and control of electron-beam-induced contamination Proc. SPIE 4344 835-43
    • (2001) Proc. SPIE , vol.4344 , pp. 835-843
    • Vladár, A.E.1    Postek, M.T.2    Vane, R.3
  • 41
    • 77954489520 scopus 로고    scopus 로고
    • Contamination specification for dimensional metrology SEMs
    • Vladár A E, Purushotham K P and Postek M T 2008 Contamination specification for dimensional metrology SEMs Proc. SPIE 6922 692217
    • (2008) Proc. SPIE , vol.6922 , pp. 692217
    • Vladár, A.E.1    Purushotham, K.P.2    Postek, M.T.3
  • 42
    • 85034776927 scopus 로고    scopus 로고
    • Evactron-XEI Scientific
    • Evactron-XEI Scientific (http://www.evactron.com)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.