Resolution limits of secondary electron dopant contrast in helium ion and scanning electron microscopy

Microscopy and Microanalysis

Volumn 17, Issue 4, 2011, Pages 637-642

  Jepson, Mark ^a   Liu, Xiong ^b   Bell, David ^c   Ferranti, David ^d   Inkson, Beverley ^e   Rodenburg, Cornelia ^e  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^b CARL ZEISS SMT AG   (Germany)

^c HARVARD UNIVERSITY   (United States)

^d Carl Zeiss Vision Inc USA   (United States)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

contrast mechanisms; dopant contrast; helium ion microscopy (HeIM); scanning electron microscopy (SEM)

Indexed keywords

EID: 80054907611     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927611000365     Document Type: Article

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