Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 4, 2009, Pages 584-589

  Ohya, K ^a   Yamanaka, T ^a   Inai, K ^a   Ishitani, T ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Helium ion microscope; Scanning ion microscopy; Secondary electron emission; Topographic contrast; Voltage contrast

Indexed keywords

ELECTRON BEAMS; ELECTRONS; HELIUM; ION BEAMS; ION MICROSCOPES; RADIOACTIVITY; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SPONTANEOUS EMISSION; VOLTAGE MEASUREMENT;

DOMINANT CONTRIBUTIONS; ENERGY DISTRIBUTIONS; GA ION BEAMS; HIGH VOLTAGES; HIGH-ENERGY COMPONENTS; INCIDENT ANGLES; LINE PROFILES; NEGATIVE VOLTAGES; SCANNING ELECTRON MICROSCOPES; SCANNING ION MICROSCOPY; SECONDARY ELECTRON EMISSION; SECONDARY ELECTRON IMAGES; SI SURFACES; SMALL AREAS; SPUTTER EROSIONS; STEP STRUCTURES; TOPOGRAPHIC CONTRAST; VOLTAGE CONTRAST;

IONS;

EID: 61349117360     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.11.003     Document Type: Article

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