Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Gao, Chao ^a   Ma, Xiangyang ^a   Zhao, Jianjiang ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CZ SILICON; CZOCHRALSKI SILICON; DENSITY FUNCTIONAL THEORIES (DFT); DFT CALCULATION; OXYGEN PRECIPITATION; THEORETICAL CALCULATIONS; THEORETICAL RESULT; THEORETICAL STUDY; VACANCY-RELATED COMPLEXES;

DENSITY FUNCTIONAL THEORY; POINT DEFECTS; PRECIPITATION (CHEMICAL); SILICON; VACANCIES;

TIN;

EID: 84874783501     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794531     Document Type: Article

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