Effect of vacancies on nucleation of oxide precipitates in silicon

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 387-390

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electronic Materials   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

Nucleation; Oxygen; Precipitation; Silicon; Vacancy

Indexed keywords

AGGLOMERATION; CONCENTRATION (PROCESS); DIFFUSION; NUCLEATION; OXIDES; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING;

VACANCY CONCENTRATIONS;

SILICON WAFERS;

EID: 0036965185     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00119-1     Document Type: Conference Paper

References (8)

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8. Voronkov V.V., Falster R. J Electrochem Soc. 149:2002;G167.