Modeling of point defect behavior by the stress due to impurity doping in growing silicon

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 294-298

  Tanahashi, K ^a   Harada, H ^a   Koukitsu, A ^b   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Point defects; A1. Valence force field; A1. Void defects; A2. Czochralski method; B1. Nitrogen; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; MATHEMATICAL MODELS; NITROGEN; POINT DEFECTS; SEMICONDUCTOR DOPING; STRAIN; STRESSES;

VACANCIES; VALENCE FORCE FIELD; VOID DEFECTS;

SEMICONDUCTING SILICON;

EID: 0035334026     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00877-6     Document Type: Conference Paper

References (15)