Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 837-841

  Yang, Deren ^a   Chen, Jiahe ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTALLIZATION; DOPING (ADDITIVES); GERMANIUM; GRAIN BOUNDARIES; GROWTH (MATERIALS); IMPURITIES; INTEGRATED CIRCUITS; NONMETALS; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; ULSI CIRCUITS;

A1. DOPING; A2. CZOCHRALSKI METHOD; A2. SINGLE-CRYSTAL GROWTH; B2. SEMICONDUCTING SILICON; BULK MICRO DEFECTS; CZOCHRALSKI SILICONS; DENUDED ZONES; HIGH CONTENTS; IMPURITIES IN; IMPURITY DOPING; INTERNAL GETTERING; METAL CONTAMINATIONS; NEW CONCEPTS; OXYGEN PRECIPITATIONS; PERFORMANCE OF DEVICES; POTENTIAL MECHANISMS; SI WAFERS;

SEMICONDUCTING SILICON;

EID: 59749092965     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.194     Document Type: Article

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