Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 °C

Journal of the Electrochemical Society

Volumn 147, Issue 7, 2000, Pages 2727-2733

  Neimash, V B ^a   Kraitchinskii, A ^a   Kras'ko, M ^a   Puzenko, O ^a   Claeys, C ^b,c   Simoen, E ^b   Svensson, B ^d   Kuznetsov, A ^b  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; OXYGEN; PRECIPITATION (CHEMICAL); RADIATION HARDENING; SEMICONDUCTOR DOPING; TIN;

RADIATION HARDNESS;

SEMICONDUCTING SILICON;

EID: 0034226126     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393596     Document Type: Article

References (38)

1. J. F. A. Nijs, Advanced Silicon and Semiconductor Silicon-Alloy Based Materials and Devices, Inst. of Physics, Bristol (1994).
2. R. Jones and S. Oberg, Phys. Rev. Lett., 68, 86 (1992).
3. N. Fukuoka, K. Atobe, and M. Honda, Jpn. J. Appl. Phys., 29, 1625 (1990).
4. Y. Kamiura, F. Hashimoto, and M. Yoneta, J. Appl. Phys., 68, 1921 (1990).
5. S. Hahn, M. Arst, K. N. Ritz, S. Shatas, H. J. Stein, Z. U. Rek, and W. A. Tiller, J. Appl. Phys., 64, 849 (1988).
6. Q. Sun, H. K. Yao, J. Lagowski, and H. C. Gatos, J. Appl. Phys., 67, 4313 (1990).
7. W. Wijaranakula, J. Appl. Phys., 69, 2737 (1991).
8. S. Gupta, S. Messoloras, J. R. Schneider, R. J. Stewart, and W. Zulehner, Semicond. Sci. Technol., 7, 6 (1992).
9. W. J. Taylor, U. M. Gosele, and T. Y. Tan, Jpn. J. Appl. Phys., 32, 4857 (1993).
10. G. Ferenczi, C. A. Londos, T. Pavelka, M. Somogyi, and A. Mertens, J. Appl. Phys., 63, 193 (1987).
11. B. O. Kolbesen and A. Muhlbauer, Solid-State Electron., 8, 759 (1982).
12. G. D. Watkins, Phys. Rev. B, 12, 4383 (1975).
13. V. B. Neimash, M. G. Soskin, B. M. Turovskii, V. I. Shakhovtsov, and V. L. Shindich, Sov. Phys. Semicond., 16, 577 (1982).
14. B. G. Svensson, J. Svensson, J. L. Lindström, G. Davis, and J. W. Corbett, Appl. Phys. Lett., 51, 2257 (1987).
15. A. Brelot, IEEE Trans. Nucl. Sci., 18, 220 (1972).
16. B. G. Svensson and J. L. Lindström, J. Appl. Phys., 72, 5616 (1992).
17. A. S. Oates and R. C. Newman, Appl. Phys. Lett., 49, 262 (1986).
18. K. Wada and N. Inoue, in Semiconductor Silicon 1986, H. R. Huff, T. Abe, and B. O. Kolbesen, Editors, PV 86-4, p. 778, The Electrochemical Society Proceedings Series, Pennington, NJ (1986).
19. W. Wijaranakula, J. Appl. Phys., 72, 2713 (1992).
20. See, for example, Proceedings of the 4th ROSE Workshop, CERN/LEB 98-11 (1998).
21. R. Kozlowski, P. Kaminski, and E. Nossarzewska-Orlowska, in Proceedings of 1st ENDEASD Workshop, C. Claeys, Editor, pp. 186-195, (1999).
22. B. Dierickx, D. Wouters, G. Willems, A. Alaerts, I. Debusschere, E. Simoen, J. Vlummens, M. Campbell, F. Pengg, P. Aspell, L. Bosisio, E. Focardi, F. Forti, S. Kashigin, A. Mekkaoui, M. Habrard, D. Sauvage, and P. Delpierre, IEEE Trans. Nucl. Sci., 40, 753 (1993).
23. V. B. Neimash, O. O. Puzenko, O. M. Kabaldin, A. M. Kraitchinski, M. M. Kras'ko, C. Claeys, and E. Simoen, Solid-State Phenom., 69-70, 351 (1999).
24. L. I. Murin and V. P. Markevich, in Proceedings of International Conference on Science and Technology of Defect Control in Semiconductors, 1989, K. Sumino, Editor, pp. 199-210, North-Holland, Amsterdam (1990).
25. W. Kaiser, H. Frisch, and H. Reiss, Phys. Rev., 112, 1546 (1958).
26. A. Bourret, in Proceedings of 13th International Conference on Defects in Semiconductors, L. C. Kimerling and J. M. Parsley, Jr., Editors, p. 129, The Metallurgical Soc. of AIME (1985).
27. C. Claeys and J. Vanhellemont, Solid State Phenom., 6-7, 21 (1989).
28. U. Gösele and T. Y. Tan, Appl. Phys. A, 28, 79 (1982).
29. R. C. Newman, J. Phys. C, 18, L967 (1985).
30. U. Gösele, K. Y. Ahn, B. P. R. Marioton, T. Y. Tan, and S.-T. Lee, Appl. Phys. A, 48, 219 (1989).
31. S. A. McQuaid, M. J. Binns, C. A. Londos, J. H. Tucker, R. A. Brown, and R. C. Newman, J. Appl. Phys., 77, 1427 (1995).
32. D. Åberg, B. G. Svensson, T. Hallberg, and J. L. Lindström, Phys. Rev. B, 58, 12944 (1998).
33. T. R. Waite, J. Chem. Phys., 28, 103 (1958).
34. R. C. Newman, M. J. Binns, F. M. Livingston, and S. Messoloras, Physica, 116B, 264 (1983).
35. Y. Takano and M. Maki, in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Editors, p. 469, The Electrochemical Society, Inc., Princeton, NJ (1973).
36. J. C. Mikkelsen, Appl. Phys. Lett., 40, 336 (1982).
37. M. Stavola, J. R. Patel, L. C. Kimerling, and P. E. Freeland, Appl. Phys. Lett., 42, 73 (1983).
38. V. P. Markevich and L. I. Murin, Phys. Status Solidi A, 111, K149 (1989).