Effect of high temperature pre-anneal on oxygen precipitates nucleation kinetics in Si

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 123-128

  Falster, R ^a   Cornara, M ^a   Gambaro, D ^a   Olmo, M ^a   Pagani, M ^a  

^a MEMC Electronic Materials SpA   (Italy)

Author keywords

Critical Size; Nucleation; Nuclei Size Distribution; Oxygen

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; HIGH TEMPERATURE EFFECTS; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); REACTION KINETICS; DEFECTS; ISOTHERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SIZE DISTRIBUTION;

OXYGEN PRECIPITATES;

SEMICONDUCTING SILICON; OXYGEN;

CLUSTER DISTRIBUTIONS; CRITICAL SIZE; CZ SILICON; HIGH TEMPERATURE; HIGH TEMPERATURE HEAT TREATMENT; NUCLEATION KINETICS; NUCLEI SIZE DISTRIBUTIONS; OXYGEN PRECIPITATES;

EID: 16944365291     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.123     Document Type: Article

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