Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3255-3263

  Karoui, A ^a   Karoui, F Sahtout ^a   Rozgonyi, G A ^a   Yang, D ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STRUCTURES; DENUDED ZONES (DZ); MELTING POINTS; VOID FORMATION;

ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION; DOPING (ADDITIVES); ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; NUCLEATION; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; TENSILE STRESS; THERMAL CYCLING;

SILICON WAFERS;

EID: 5044220529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773921     Document Type: Article

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