Specific features of the behavior of oxygen in Sn-doped silicon

Semiconductors

Volumn 34, Issue 9, 2000, Pages 994-997

  Pomozov, Yu V ^a   Sosnin, M G ^a   Khirunenko, L I ^a   Yashnik, V I ^a  

^a INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034259003     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309402     Document Type: Article

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