IR studies of oxygen-related and carbon-related defects in Sn-doped silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 701-704

  Londos, Charalampos A ^a   Andrianakis, Andreas ^a   Aliprantis, Dimitris ^a   Sgourou, Efstratia N ^a   Ohyama, Hidenori ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Defects; Electron irradiation; IR spectroscopy; Silicon

Indexed keywords

ELECTRONIC APPLICATION; IR BANDS; IR SPECTROSCOPY; ISOCHRONAL ANNEALS; RADIATION HARDNESS; RADIATION INDUCED DEFECTS; ROOM TEMPERATURE; SILICON MATERIALS; SN-DOPED; SYSTEMATIC STUDY;

ELECTRON IRRADIATION; INFRARED SPECTROSCOPY; OXYGEN; OXYGEN VACANCIES; SILICON; TIN; VACANCIES;

DEFECTS;

EID: 79952693157     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000105     Document Type: Article

References (21)

1. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).
2. F. Shimura (ed.), Semiconductors and Semimetals, Vol. 42, Oxygen in Silicon (Academic Press, London, 1994).
3. L. C. Kimerling, Inst. Phys. Conf. Ser. 31, 221 (1977).
4. G. Davies and R. C. Newnan, in: Handbook of Semiconductors, edited by S.Mahajan, Vol. 3 (Elsevier, Amsterdam, 1994), pp. 1557-1635.
5. G. Ferenczi, C. A. Londos, T. Pavelka, and M. Somogyi, J. Appl. Phys. 63, 183 (1988).
6. C. A. Londos, L. G. Fytros, and G. J. Georgiou, Defect Diffusion Forum 171/172, 1 (1999).
7. W. Corbett, G. D. Watkins, and R. S. Mc Donald, Phys. Rev. 135, A1381 (1964).
8. C. A. Londos, G. D. Antonaras, M. S. Potsidi, A. Misiuk, and V. V. Emtsev, Solid State Phenom. 108/109, 205 (2005).
9. L. I. Murin, J. L. Lindström, B. G. Svensson, V. P. Markevich, A. R. Peaker, and C. A. Londos, Solid State Phenom. 108/109, 267 (2005).
10. L. I. Murin, J. L. Lindström, V. P. Markevich, A. Misiuk, and C. A. Londos, J. Phys.: Condens. Matter 17, S2237 (2005).
11. R. G. Svenson and J. L. Lindstrom, Phys. Status Solidi A 95, 537 (1986).
12. G. D. Watkins, Phys. Rev. B 12, 4383 (1975).
13. E. V. Lavrov, M. Fanciulli, M. Kaukonen, R. Jones, and P. R. Briddon, Phys. Rev. B 64, 125212 (2001).
14. C. A. Londos, Jpn. J. Appl. Phys. 27, 2089 (1988).
15. C. A. Londos, Phys. Status Solidi A 102, 639 (1987).
16. C. A. Londos, Semicond. Sci. Technol. 5, 645 (1990)
17. M. S. Potsidi and C. A. Londos, J. Appl. Phys. 100, 033523 (2008).
18. N. Inoue, H. Ohyama, Y. Goto, and T. Sugiyama, Physica B 401/402, 477 (2007).
19. H. Yamada-Kaneta, Y. Shirakawa, and C. Kaneta, in: Proceedings of the NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon (Exeter, UK, 1996), edited by R. Jones, NATO ASI Series 3, High Technology, Vol. 17 (Kluwer Academic Publishers, Dordrecht, 1996), pp. 389-396.
20. L. I. Murin, V. P. Markevich, J. L. Lindström, M. Kleverman, J. Hermansson, T. Hallberg, and B. G. Svensson, Solid State Phenom. 82-84, 57 (2002).
21. C. Clays, E. Simoen, V. B Neimash, A. Kraitchinskii, M. Krasko, O. Puzenko, A. Blondeel, and P. Clauws, J. Electrochem. Soc. 148, G738 (2001)