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Volumn 5, Issue 1, 2012, Pages 41-50

Ge-on-Si for Si-based integrated materials and photonic devices

Author keywords

Ge; optoelectronic integration; photonic device

Indexed keywords


EID: 84873880478     PISSN: 20952759     EISSN: 20952767     Source Type: Journal    
DOI: 10.1007/s12200-012-0200-2     Document Type: Review
Times cited : (13)

References (39)
  • 2
    • 9144245707 scopus 로고    scopus 로고
    • Demonstration of a silicon Raman laser
    • Boyraz O, Jalali B. Demonstration of a silicon Raman laser. Optics Express, 2004, 12(21): 5269-5273.
    • (2004) Optics Express , vol.12 , Issue.21 , pp. 5269-5273
    • Boyraz, O.1    Jalali, B.2
  • 6
    • 34548402181 scopus 로고    scopus 로고
    • Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
    • Liu J, Sun X, Pan D, Wang X, Kimerling L C, Koch T L, Michel J. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Optics Express, 2007, 15(18): 11272-11277.
    • (2007) Optics Express , vol.15 , Issue.18 , pp. 11272-11277
    • Liu, J.1    Sun, X.2    Pan, D.3    Wang, X.4    Kimerling, L.C.5    Koch, T.L.6    Michel, J.7
  • 9
    • 67650486631 scopus 로고    scopus 로고
    • Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
    • Sun X, Liu J, Kimerling L C, Michel J. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si. Applied Physics Letters, 2009, 95(1): 011911.
    • (2009) Applied Physics Letters , vol.95 , Issue.1 , pp. 011911
    • Sun, X.1    Liu, J.2    Kimerling, L.C.3    Michel, J.4
  • 12
    • 66849087515 scopus 로고    scopus 로고
    • Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
    • Cheng S L, Lu J, Shambat G, Yu H Y, Saraswat K, Vuckovic J, Nishi Y. Room temperature 1. 6 μm electroluminescence from Ge light emitting diode on Si substrate. Optics Express, 2009, 17(12): 10019-10024.
    • (2009) Optics Express , vol.17 , Issue.12 , pp. 10019-10024
    • Cheng, S.L.1    Lu, J.2    Shambat, G.3    Yu, H.Y.4    Saraswat, K.5    Vuckovic, J.6    Nishi, Y.7
  • 16
    • 27644490697 scopus 로고    scopus 로고
    • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
    • Kuo Y H, Lee Y K, Ge Y, Ren S, Roth J E, Kamins T I, Miller D A B, Harris J S. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon. Nature, 2005, 437(7063): 1334-1336.
    • (2005) Nature , vol.437 , Issue.7063 , pp. 1334-1336
    • Kuo, Y.H.1    Lee, Y.K.2    Ge, Y.3    Ren, S.4    Roth, J.E.5    Kamins, T.I.6    Miller, D.A.B.7    Harris, J.S.8
  • 17
    • 78751512555 scopus 로고    scopus 로고
    • Design of waveguide integrated Ge-quantum-well electro-absorption modulators
    • Zhao H W, Hu W X, Xue C L, Cheng B W, Wang Q M. Design of waveguide integrated Ge-quantum-well electro-absorption modulators. Chinese Physics Letters, 2011, 28(1): 014204.
    • (2011) Chinese Physics Letters , vol.28 , Issue.1 , pp. 014204
    • Zhao, H.W.1    Hu, W.X.2    Xue, C.L.3    Cheng, B.W.4    Wang, Q.M.5
  • 21
    • 79956028272 scopus 로고    scopus 로고
    • High performance germanium-on-silicon detectors for optical communications
    • Famà S, Colace L, Masini G, Assanto G, Luan H C. High performance germanium-on-silicon detectors for optical communications. Applied Physics Letters, 2002, 81(4): 586-588.
    • (2002) Applied Physics Letters , vol.81 , Issue.4 , pp. 586-588
    • Famà, S.1    Colace, L.2    Masini, G.3    Assanto, G.4    Luan, H.C.5
  • 25
    • 65649140425 scopus 로고    scopus 로고
    • Reverse current reduction of Ge photodiodes on Si without post-growth anneling
    • Park S B, Takita S Y, Ishikawa Y, Osaka J, Wada K. Reverse current reduction of Ge photodiodes on Si without post-growth anneling. Chinese Optics Letters, 2009, 7(4): 286-290.
    • (2009) Chinese Optics Letters , vol.7 , Issue.4 , pp. 286-290
    • Park, S.B.1    Takita, S.Y.2    Ishikawa, Y.3    Osaka, J.4    Wada, K.5
  • 26
    • 77049126456 scopus 로고    scopus 로고
    • Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm
    • Xue H Y, Xue C L, Cheng B W, Yu Y D, Wang Q M. Zero biased Ge-on-Si photodetector with a bandwidth of 4. 72 GHz at 1550 nm. Chinese Physics B, 2009, 18(6): 2542.
    • (2009) Chinese Physics B , vol.18 , Issue.6 , pp. 2542
    • Xue, H.Y.1    Xue, C.L.2    Cheng, B.W.3    Yu, Y.D.4    Wang, Q.M.5
  • 33
    • 51549109577 scopus 로고    scopus 로고
    • GaAs epitaxy on Si substrates: modern status of research and engineering
    • Bolkhovityanov Y B, Pchelyakov O P. GaAs epitaxy on Si substrates: modern status of research and engineering. Physics-Uspekhi, 2008, 51(5): 437-456.
    • (2008) Physics-Uspekhi , vol.51 , Issue.5 , pp. 437-456
    • Bolkhovityanov, Y.B.1    Pchelyakov, O.P.2
  • 39
    • 70349675893 scopus 로고    scopus 로고
    • Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
    • Mathews J, Roucka R, Xie J, Yu S Q, Menendez J, Kouvetakis J. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications. Applied Physics Letters, 2009, 95(13): 133506-133508.
    • (2009) Applied Physics Letters , vol.95 , Issue.13 , pp. 133506-133508
    • Mathews, J.1    Roucka, R.2    Xie, J.3    Yu, S.Q.4    Menendez, J.5    Kouvetakis, J.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.