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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

Hybrid silicon integration

(7) Jones, R a Park, H D b Fang, A W b Bowers, J E b Cohen, O c Raday, O c Paniccia, M J a

a INTEL CORPORATION (United States)

b Santa Barbara (United States)

c INTEL CORPORATION (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINAS; AMPLIFIED SPONTANEOUS EMISSIONS; HYBRID INTEGRATION; HYBRID SILICON; III-V OPTOELECTRONICS; INAS; ON CHIPS; OPTICAL AMPLIFIER; QUANTUM WELL; SILICON PHOTONIC DEVICES; SILICON PLATFORMS; SILICON-ON-INSULATORS; SOI WAFERS; WAFER-LEVEL INTEGRATION;

INDIUM ARSENIDE; LIGHT AMPLIFIERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM WELL LASERS; RING LASERS; SEMICONDUCTING SILICON COMPOUNDS; WAFER BONDING;

SILICON WAFERS;

EID: 71049146751 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9418-y Document Type: Conference Paper

Times cited : (18)

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