30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide

Optics Express

Volumn 19, Issue 8, 2011, Pages 7062-7067

  Feng, Ning Ning ^a   Feng, Dazeng ^a   Liao, Shirong ^a   Wang, Xin ^a   Dong, Po ^a   Liang, Hong ^a   Kung, Cheng Chih ^a   Qian, Wei ^a   Fong, Joan ^a   Shafiiha, Roshanak ^a   Luo, Ying ^b   Cunningham, Jack ^b   Krishnamoorthy, Ashok V ^b   Asghari, Mehdi ^a  

^a KOTURA INC   (United States)

^b Sun Labs   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; GERMANIUM; MODULATORS;

3 DB BANDWIDTH; ACTIVE REGIONS; EA MODULATORS; EXTINCTION RATIOS; EYE-DIAGRAM; HIGH TRANSMISSION RATE; HIGH-SPEED; LARGE CORE; LARGE-SIGNAL MODULATION; P-I-N STRUCTURE; SILICON ON INSULATOR WAVEGUIDE; SILICON WAVEGUIDE; SINGLE MODE; SOI WAVEGUIDES; WAVELENGTH RANGES;

WAVEGUIDES;

GERMANIUM; SILICON;

ABSORPTION; ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; OPTICAL INSTRUMENTATION; OPTICS; PHYSICS; REFRACTOMETRY;

ABSORPTION; ELECTRONICS; EQUIPMENT DESIGN; GERMANIUM; MATERIALS TESTING; OPTICAL DEVICES; OPTICS AND PHOTONICS; PHYSICS; REFRACTOMETRY; SILICON;

EID: 79953900849     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.007062     Document Type: Article

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