Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(0 0 1) substrates

Journal of Crystal Growth

Volumn 317, Issue 1, 2011, Pages 43-46

  Su, Shaojian ^a   Wang, Wei ^a   Cheng, Buwen ^a   Zhang, Guangze ^a   Hu, Weixuan ^a   Xue, Chunlai ^a   Zuo, Yuhua ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Thermal stability; A3. Molecular beam epitaxy; B1. Germanium; B1. Germanium tin alloys

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; B1. GERMANIUM; B1. GERMANIUM TIN ALLOYS; CUBIC STRUCTURE; DEVICE APPLICATION; GE THIN FILMS; HIGH QUALITY; HIGH-CRYSTALLINE QUALITY; HIGH-RESOLUTION X-RAY DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTRA; SI(0 0 1); TEM; THERMAL STABILITY;

EPITAXIAL GROWTH; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE SEGREGATION; THERMODYNAMIC STABILITY; TIN; TIN ALLOYS; X RAY DIFFRACTION;

GERMANIUM ALLOYS;

EID: 79952040373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.015     Document Type: Article

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