High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

Applied Physics Letters

Volumn 87, Issue 10, 2005, Pages

  Liu, Jifeng ^a   Michel, Jurgen ^a   Giziewicz, Wojciech ^a   Pan, Dong ^a   Wada, Kazumi ^a,d   Cannon, Douglas D ^a   Jongthammanurak, Samerkhae ^a   Danielson, David T ^a   Kimerling, Lionel C ^a   Chen, Jian ^b   Ilday, F Ömer ^b   Kärtner, Franz X ^b   Yasaitis, John ^c  

^a Massachusetts Institute of Technology   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

^c ANALOG DEVICES INC   (United States)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GE P-I-N PHOTODETECTORS; VOLTAGE REQUIREMENTS;

BANDWIDTH; CMOS INTEGRATED CIRCUITS; GERMANIUM; OPTICAL INTERCONNECTS; QUANTUM EFFICIENCY; SILICON; STRAIN; TELECOMMUNICATION SYSTEMS; TENSILE STRESS; ULSI CIRCUITS;

PHOTODETECTORS;

EID: 24644476916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2037200     Document Type: Article

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