Si/Ge separated absorption charge multiplication avalanche photodetector with low dark current

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2009, Pages 178-180

  Xue, Chunlai ^a   Xue, Haiyun ^a   Cheng, Buwen ^a   Bai, Anqi ^a   Hu, Weixuan ^a   Yu, Yude ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Avalanche photodetectors; Charge and multiplication; Separate absorption; Si Ge

Indexed keywords

AVALANCHE PHOTODETECTORS; BREAKDOWN VOLTAGE; CHARGE MULTIPLICATION; SI/GE;

ABSORPTION; OPTOELECTRONIC DEVICES;

PHOTODETECTORS;

EID: 77951046588     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2009.5338325     Document Type: Conference Paper

References (10)

1. L. Colace, G. Masini, G. Assanto, H. C. Luan, and L. C. Kimerling, "Fast Ge-on-Si photodetectors for the near infrared,"ECS Trans., vol.3, no.7, pp. 85-93, 2006.
2. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jong, thammanurak, D.T. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett., vol.87, p. 011110, Jul. 2005.
3. L. Colace, G. Masini, and G. Assanto, "Ge-on-Si. approaches to the detection, of near-infrared light," IEEE J. Quantum Electron., vol.35, no.12, pp. 1843-1852, Dec. 1999.
4. M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett, vol.17, no.7, pp. 1510-1512, Jul. 2005.
5. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, "Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules," IEEE Photon. Technol. Lett., vol.18, no.23, pp. 2442-2444, Dec. 1, 2006.
6. S. Famà, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, "High performance germanium on silicon detector for optical communications," Appl. Phys. Lett., vol.81, no.4, pp. 586-588, Jul. 2002.
7. Y Kang, S. Litski, G. Sarid, M. Morse, M. J. Paniccia, A. Pauchard, K. G Gan and J. E. Bowers, "Ge/Si avalanche photodiodes for 1.3 D m optical fiber links," in 2007 4th IEEE International Conference On Group IV Photonics (IEEE, Piscataw ay, NJ, USA, 2007) pp. 294-296.
8. Yimin Kang, Han-Din Liu, Mike Morse ,et. al, "Monolithic germanium/silicon, avalanche photodiodes with 340 GHz gain-bandwidth product" Nature Photonics, 7 DECEMBER 2008
9. H. Kanbe, M. Komatsu and M. Miyaji, "Ge/Si Heterojunction photodiodes fabricated by wafer bonding," Japanese Journal of Applied Physics 45, L644-L646 (2006).
10. M. Caroll, K. Childs, D. Serkland, R. Jarecki, T. Bauer and K. Saiz, "Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium," Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007, 293-298 (2007).