Reverse current reduction of Ge photodiodes on Si without post-growth annealing

Chinese Optics Letters

Volumn 7, Issue 4, 2009, Pages 286-290

  Park, Sungbong ^a   Takita, Shinya ^a   Ishikawa, Yasuhiko ^a   Osaka, Jiro ^a   Wada, Kazumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LOWERING; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; E-FIELD; NEW APPROACHES; NONTHERMAL; ORDER OF MAGNITUDE; PIN PHOTODIODE; POSTGROWTH ANNEALING; RESPONSIVITY; REVERSE CURRENTS; SI LAYER;

CHARGE COUPLED DEVICES; ELECTRIC FIELDS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; PHOTODIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65649140425     PISSN: 16717694     EISSN: None     Source Type: Journal    
DOI: 10.3788/COL20090704.0286     Document Type: Article

References (17)

1. K. Wada, J. F. Liu, S. Jongthammanurak, D. D. Cannon, D. T. Danielson, D. H. Ahn, S. Akiyama, M. Popovic, D. R. Lim, K. K. Lee, H.-C. Luan, Y. Ishikawa, J. Michel, H. A. Haus, and L. C. Kimerling, " Si microphotonics for optical interconnection " in Optical Interconnects L. Pavesi and L. Guillot(eds.)(Springer, Berlin, 2006) Chap.11, pp.291-310.
2. M. J. Kobinsky, B. A. Block, J.-F. Zheng, B. C. Barnett, E. Mohammed, M. Reshotko, F. Robertson, S. List, I. Young, and K. Cadien, Intel Technol. J. 8, 129(2004).
3. L. Vivien, M. Rouviere, J.-M. Fedeli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Mel-haoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, Opt. Express 15, 9843(2007).
4. D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kartner, Opt. Express 15, 3916(2007).
5. L. M. Giovane, H.-C. Luan, A. M. Agarwal, and L. C. Kimerling, Appl. Phys. Lett. 78, 541(2001).
6. H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, Appl. Phys. Lett. 75, 2909(1999).
7. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, Appl. Phys. Lett. 87, 011110(2005).
8. T. A. Langdo. C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, and D. A. Antoniadis, Appl. Phys. Lett. 76, 3700(2000).
9. Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banorjee, and J. C. Campbell, IEEE J. Sel. Top. Quantum Electron. 12, 1450(2006).
10. G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484(1979).
11. H.-D. Lee, IEEE Trans. Electron Devices 47, 762(2000).
12. G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, IEEE Trans. Electron Devices 39, 331(1992).
13. A. Poyai, E. Simoeri, and C. Claeys, IEEE Trans. Electron Devices 48, 2445(2001).
14. S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, Appl. Phys. Lett. 81, 586(2002).
15. L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, and L. C. Kimerling, Appl. Phys. Lett. 88, 101111(2006).
16. W. G. Oldham and A. G. Milnes, Solid-State Electron. 7, 153(1964).
17. G. Masini, L. Calace, G. Assanto, H.-C. Luan, and L. C. Kimerling, IEEE Trans. Electron Devices 48, 1092(2001).