Photocurrent analysis of a fast Ge p-i-n detector on Si

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Oehme, M ^a   Werner, J ^a   Kasper, E ^a   Klinger, S ^a   Berroth, M ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SILICON COMPOUNDS;

DARK CURRENT; FAST CARRIERS; INFRARED WAVELENGTHS; PHOTOCURRENT ANALYSIS;

PHOTODETECTORS;

EID: 34547676100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2757599     Document Type: Article

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