Ge on Si p-i-n photodiodes operating at 10 Gbits

Applied Physics Letters

Volumn 88, Issue 10, 2006, Pages

  Colace, Lorenzo ^a   Balbi, Michele ^a   Masini, Gianlorenzo ^a   Assanto, Gaetano ^a   Luan, Hsin Chiao ^b,c   Kimerling, Lionel C ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c SunPower Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; P-I-N PHOTODIODES;

CHEMICAL VAPOR DEPOSITION; CRYSTALS; PHOTODETECTORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

PHOTODIODES;

EID: 33644925836     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2182110     Document Type: Article

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