State of the art 10 kV NMOS transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 253-255

  Das, Mrinal K ^a   Callanan, Robert ^a   Capell, D Craig ^a   Hull, Brett ^a   Husna, Fatima ^a   Richmond, James ^a   O'Loughlin, Michael ^a   Paisley, Michael J ^a   Powell, Adrian ^a   Zhang, Qingchun ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; ELECTRIC CONDUCTIVITY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

INTERNATIONAL SYMPOSIUM; MATERIAL QUALITY; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICES;

EID: 51549090182     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538946     Document Type: Conference Paper

References (2)

1. S.-H. Ryu, et al., "10kV, 5A 4H-SiC Power DMOSFET ", Proceedings of 18th ISPSD, p. 265-268, 2006.
2. ON and Fast Switching", Proceedings of ICSCRM, 2007.