CW 140 W recessed-gate AlGaN/GaN MISFET with field-modulating plate

Electronics Letters

Volumn 42, Issue 8, 2006, Pages 69-70

  Nakayama, T ^a   Ando, Y ^a   Okamoto, Y ^a   Inoue, T ^a   Miyamoto, H ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GAIN MEASUREMENT; GALLIUM NITRIDE; LEAKAGE CURRENTS;

FIELD-MODULATING PLATE; GATE-LEAKAGE CURRENT; POWER-ADDED EFFICIENCY; RECESSED-GATE ALGAN/GAN MISFET;

MISFET DEVICES;

EID: 33646199174     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20064384     Document Type: Article

References (8)

1. Eastman, L.F.: ' Experimental power-frequency limits of AlGaN/GaN HEMT's ', IEEE MTT-S Dig., Seattle, WA, USA, July 2002, p. 2273-2275
2. Wu, Y.-F., Chavarkart, P., Moore, M., Parikh, P., Keller, B., and Mishra, U.: ' A 50-W AlGaN/GaN HEMT amplifier ', IEDM Tech. Dig., San Francisco, CA, USA, December 2000, p. 375-376
3. Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., and Smith, T.J.: ' Applications of SiC MESFETs and GaN HEMTs in power amplifier design ', IEEE MTT-S Dig., Seattle, WA, USA, July 2002, p. 1819-1822
4. Kikkawa, T., Nagahara, M., Adachi, N., Yokokawa, S., Kato, S., Yakoyama, M., Kanamura, M., Yamaguchi, Y., Hara, N., and Joshin, K.: ' High-power and high-efficiency AlGaN/GaN HEMT operated at 50V drain bias voltage ', IEEE RFIC Symp. Dig., Philadelphia, PA, USA, June 2003, p. 167-170
5. 4/AlGaN/GaN-metal-insulator- semiconductor heterostructure field-effect transistors ', IEEE Electron Device Lett., 2003, 24, (9), p. 541-543
6. Chini, A., Wittich, J., Heikman, S., Keller, S., DenBaars, S.P., and Mishra, U.K.: ' Power and linearity characteristics of GaN MISFETs on sapphire substrate ', IEEE Electron Device Lett., 2004, 25, (2), p. 55-57
7. Okamoto, Y., Ando, Y., Miyamoto, H., Nakayama, T., Inoue, T., and Kuzuhara, M.: ' An 80W AlGaN/GaN heterojunction FET with a field-modulating plate ', IEEE MTT-S Dig., Philadelphia, PA, USA, June 2003, p. 225-228
8. Nakayama, T., Miyamoto, H., Ando, Y., Okamoto, Y., Inoue, T., Hataya, K., and Kuzuhara, M.: ' Low contact resistance and smooth-surface Ti/Al/Nb/Au ohmic electrode on AlGaN/GaN heterostructure ', Appl. Phys. Lett., 2004, 85, (17), p. 3775-3776