Nonpolar AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with a normally off operation

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 368-372

  Kuroda, Masayuki ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

AlN buffer; Field effect transistors (FETs); GaN; Metal insulator semiconductor (MIS) devices; Nonpolar; Normally off operation

Indexed keywords

A-PLANE; ALGAN/GAN; ALN BUFFER; CAPPING LAYER; CURRENT COLLAPSE; GAN LAYERS; GATE-LEAKAGE CURRENT; METAL-INSULATOR-SEMICONDUCTOR DEVICES; METAL-INSULATOR-SEMICONDUCTORS; MIS GATE STRUCTURE; MIS-HFET; NON-POLAR; NORMALLY OFF; OHMIC ELECTRODES; PARASITIC RESISTANCES; POLARIZATION CHARGES; POSITIVE GATE BIAS; POWER SWITCHING APPLICATIONS; RADIO FREQUENCIES; X RAY ROCKING CURVE;

BUFFER LAYERS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MASKS; MESFET DEVICES; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE; SWITCHING CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 76349122199     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2037458     Document Type: Article

References (13)

1. O. Ambacher, J. Smart, J. R. Shealy, N. G.Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol.85, no.6, pp. 3222-3233, Mar. 1999.
2. H. Ishida, Y. Hirose, T.Murata, A. Kanda, Y. Ikeda, T.Matsuno, K. Inoue, T. Tanaka, T. Egawa, and D. Ueda, "A high power Tx/Rx switch IC using AlGaN/GaN HFETs," in IEDM Tech. Dig., 2003, pp. 68-72.
3. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda, and T. Egawa, "AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure," IEEE Trans. Electron Devices, vol.52, no.9, pp. 1963-1968, Sep. 2005.
4. M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. S. Shur, and H. Park, "Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors," Appl. Phys. Lett., vol.68, no.4, pp. 514-516, Jan. 1996. (Pubitemid 126684420)
5. Y. Cai, Y. Zhou, K. Chen, and K. Lau, "High-performance enhancementmode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol.26, no.7, pp. 435-437, Jul. 2005. (Pubitemid 41046715)
6. M. Kuroda, H. Ishida, T. Ueda, and T. Tanaka, "Nonpolar (11-20) plane AlGaN/GaN heterojunction field effect transistors on (1-102) plane sapphire," J. Appl. Phys., vol.102, no.9, p. 093 703, Nov. 2007.
7. T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/ GaN heterojunction field-effect transistors," Appl. Phys. Express, vol.2, no.1, p. 011 001, Jan. 2009.
8. X. Nia, Y. Fua, Y. T. Moona, N. Biyiklia, and H. Morkoc, "Optimization of (11,20) a-plane GaN growth by MOCVD on (1,102) r-plane sapphire," J. Cryst. Growth, vol.290, no.1, pp. 166-170, Apr. 2006.
9. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, "Structural characterization of nonpolar (11,20) a-plane GaN thin films grown on (1,102) r-plane sapphire," Appl. Phys. Lett., vol.81, no.3, pp. 469-471, 2002.
10. B. M. Imer, F. Wu, S. P. DenBaars, and J. S. Speck, "Improved quality (11,20) a-plane GaN with sidewall lateral epitaxial overgrowth," Appl. Phys. Lett., vol.88, no.6, p. 061 908, Feb. 2006.
11. M. D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC," Phys. Stat. Sol.(C), vol.0, no.7, pp. 2132-2135, Dec. 2003.
12. C. R. Eddy, T. D. Moustakas, and J. Scanlon, "Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy," J. Appl. Phys., vol.73, no.1, pp. 448-455, Jan. 1993.
13. C. J. Sun and M. Razeghi, "Comparison of the physical properties of GaN thin films deposited on (0001) and (01,12) sapphire substrates," Appl. Phys. Lett., vol.63, no.7, pp. 973-975, Aug. 1993.