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Journal of Applied Physics

Volumn 113, Issue 2, 2013, Pages

Annealing effect in boron-induced interface charge traps in Si/SiO 2 systems

(5) Park, H a Choi, B b Steigerwald, A a Varga, K a Tolk, N a

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; CHARGE STATE; CHARGE TRAP; INTERFACE CHARGE; TIME-DEPENDENT;

CHARGE TRAPPING; DEIONIZED WATER; ELECTRIC FIELDS; NONLINEAR OPTICS;

BORON;

EID: 84872718960 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4773527 Document Type: Article

Times cited : (5)

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