Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

  Park, Heungman ^a   Xu, Ying ^a,b   Varga, Kalman ^a   Qi, Jingbo ^a,c   Feldman, Leonard C ^a,d   Lüpke, Gunter ^e   Tolk, Norman ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b ZOMEGA TERAHERTZ CORPORATION   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d RUTGERS UNIVERSITY   (United States)

^e Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DETERMINATION; INDUCED CHARGES; INTERNAL PHOTOEMISSION; PHOTON ENERGY; PUMP-PROBE; SECOND HARMONIC GENERATION; SILICON VALENCE BAND; SINGLE PHOTON EXCITATION; THRESHOLD ENERGY; TRAP ENERGY LEVELS; TWO-COLOR;

BORON; BORON COMPOUNDS; CHARGE TRAPPING; ELECTROMAGNETIC INDUCTION; ELECTRON ENERGY LEVELS; FILLING; NONLINEAR OPTICS; PHOTONS; PUMPS; SILICON COMPOUNDS; SILICON OXIDES;

HARMONIC GENERATION;

EID: 78649242482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518070     Document Type: Article

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