Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 85-88

  Fukata, N ^a,b   Fukuda, S ^a   Sato, S ^a   Ishioka, K ^a,b   Kitajima, M ^a,b   Hishita, S ^b   Murakami, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Boron; Hydrogen; Raman; Silicon

Indexed keywords

BORON COMPOUNDS; CHEMICAL BONDS; CONCENTRATION (PROCESS); DEUTERIUM; ISOTOPES; RAMAN SCATTERING; SEMICONDUCTOR DOPING; SILICON;

ACCEPTORS; B-H COMPLEXES; ISOTOPE SHIFTS; RAMAN PEAKS;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33645141798     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.023     Document Type: Conference Paper

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