Low energy boron implantation in silicon and room temperature diffusion

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 139, Issue 1-4, 1998, Pages 98-107

  Collart, E J H ^a   Weemers, K ^a   Cowern, N E B ^a   Politiek, J ^a   Bancken, P H L ^a   Van Berkum, J G M ^a   Gravesteijn, D J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMOS; Low energy implantation; Room temperature diffusion

Indexed keywords

ANNEALING; BORON; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

ELECTRIC ACTIVATION;

SEMICONDUCTING SILICON;

EID: 0032041536     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00941-5     Document Type: Article

References (21)

1. A.E. Michel, W. Rausch, P.A. Rousheim, R.H. Kastl, Appl. Phys. Lett. 50 (1987) 416.
2. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraíz, J.M. Poate, H.S. Luftman, T.E. Haynes, J. Appl. Phys. 81 (1997) 6031.
3. A.A. van Gorkum, G.P.A. van de Walle, R.A. van den Heuvel, D.J. Gravesteijn, C.W. Fredericksz, Thin Solid Films 184 (1990) 207.
4. N.E.B. Cowern, K.T.F. Janssen, H.F.F. Jos, J. Appl. Phys. 68 (1990) 6191.
5. S. Solmi, F. Baruffaldi, R. Canterie, J. Appl. Phys. 69 (1991) 2135.
6. R.B. Fair, J. Electrochem. Soc. 137 (1990) 667.
7. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, T.E. Haynes, J.M. Poate, Nucl. Instr. and Meth. B 106 (1995) 191.
8. L.H. Zhang, K.S. Jones, P.H. Chi, D.S. Simons, Appl. Phys. Lett. 67 (1995) 2025.
9. N.E.B. Cowern, G.F.A. van de Walle, D.J. Gravesteijn, C.J. Vriezema, Phys. Rev. Lett. 67 (1991) 212.
10. K.S. Jones, S. Prussin, E.R. Weber, Appl. Phys. A 45 (1988) 1.
11. Y. Sasaki, K. Itoh, E. Inoue, S. Kishi, T. Mitsuishi, Solid State Electr. 31 (1988) 5.
12. K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, S.U. Campisano, A. Camera, Phys. Rev. Lett. 76 (1996) 1493.
13. G.H. Gimer, T. Diaz de la Rubia, D.M. Stock, J.M. Jaraíz, Nucl. Instr. Meth. B 102 (1995) 247.
14. E.J.H. Collart, K. Weemers, D.J. Gravesteijn, J.G.M. van Berkum, N.E.B. Cowern, in: Proc. Materials Research Society Spring Meeting 1997, to be published.
15. K.J. van Oostrum, P.C. Zalm, W.B. de Boer, D.J. Gravesteijn, J.W.F. Maes, Appl. Phys. Lett. 61 (1992) 1513.
16. C.S. Nicols, C.G. van de Walle, S.T. Pantelides, Phys. Rev. B 40 (1989) 5484.
17. N.E.B. Cowern, K.T.F. Janssen, G.F.A. van de Walle, D.J. Gravesteijn, Phys. Rev. Lett. 65 (1990) 2434.
18. G.D. Watkins, Phys. Rev. B 12 (1975) 5824.
19. N.E.B. Cowern, G.F.A. van de Walle, P.C. Zalm, D.J. Oostra, Phys. Rev. Lett. 69 (1992) 116.
20. λ were determined from experiments using the same MBE-system as in this paper.
21. N.E.B. Cowern, Appl. Phys. Lett. 64 (1994) 2646.