Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Microelectronic Engineering

Volumn 89, Issue 1, 2012, Pages 120-123

  Oh, Young Jun ^a   Hwang, Jin Heui ^a   Noh, Hyeon Kyun ^a   Bang, Junhyeok ^a   Ryu, Byungki ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

B dopants; B segregation; Si SiO2 interface

Indexed keywords

AB INITIO STUDY; B SEGREGATION; BORON SEGREGATION; DEFECT PAIRS; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; INTERSTITIALS; NONEQUILIBRIUM CONDITIONS; POSITIVELY CHARGED; SELF-INTERSTITIAL;

BORON; BORON COMPOUNDS; CALCULATIONS; CRYSTAL DEFECTS; DENSITY FUNCTIONAL THEORY;

DOPING (ADDITIVES);

EID: 81855185553     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.04.036     Document Type: Conference Paper

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