Characterization of boron charge traps at the interface of Si/ SiO 2 using second harmonic generation

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Park, H ^a   Qi, J ^a   Xu, Y ^a   Varga, K ^a   Weiss, S M ^a,b   Rogers, B R ^b   Lupke G ^c   Tolk, N ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c The College of William and Mary   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON IONS; CHARGE TRAP; DOPING CONCENTRATION; NEUTRAL BORON; OPTICAL SECOND HARMONIC GENERATION; OXIDE GROWTH; PHOTO-ELECTRON EMISSION; SECOND HARMONIC GENERATION; SILICON SUBSTRATES; STATIC ELECTRIC FIELDS;

BORON; BORON COMPOUNDS; CHARGE TRAPPING; ELECTRIC FIELDS; NONLINEAR OPTICS; SILICON COMPOUNDS; SILICON OXIDES;

HARMONIC GENERATION;

EID: 69049093933     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3202420     Document Type: Article

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