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Volumn 72, Issue 5, 2008, Pages 592-595

Quantum-chemical simulation of adsorption of B+ ions on a SiO2/Si(100) interface

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM CHEMICAL SIMULATIONS;

EID: 49149093602     PISSN: 10628738     EISSN: None     Source Type: Journal    
DOI: 10.3103/S1062873808050055     Document Type: Article
Times cited : (2)

References (8)
  • 7
    • 49149108447 scopus 로고    scopus 로고
    • Simulation of Atomistic Processes During Silicon Oxidation
    • Thesis of PhD degree, Lausanne: EPFL
    • Bongiorno, A., Simulation of Atomistic Processes During Silicon Oxidation, Thesis of PhD degree, Lausanne: EPFL, 2003.
    • (2003)
    • Bongiorno, A.1
  • 8
    • 49149089852 scopus 로고    scopus 로고
    • [Semiconductors (Engl. Transl.), vol. 34, no. 3, p. 296]
    • Zavodinskii, V.G., Fiz. Tekh. Poluprovodn. (St. Petersburg), 2000, vol. 34, no. 3, p. 302 [Semiconductors (Engl. Transl.), vol. 34, no. 3, p. 296].
    • (2000) Fiz. Tekh. Poluprovodn. (St. Petersburg) , vol.34 , Issue.3 , pp. 302
    • Zavodinskii, V.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.