First-principles calculations of boron-related defects in SiO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 18, 2003, Pages

  Otani, Minoru ^a,b   Shiraishi, Kenji ^a   Oshiyama, Atsushi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; SILICON DIOXIDE;

ARTICLE; ATOM; CALCULATION; CHEMICAL BINDING; COMPLEX FORMATION; DIFFUSION; ENERGY; GEOMETRY; SURFACE CHARGE;

EID: 84870471359     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.184112     Document Type: Article

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